MIL-PRF-28750F
APPENDIX B
B.3.3.2.3.1.1 Sample size. The sample size shall be at least 10 dice from each wafer lot.
B.3.3.2.3.1.2 Subgroup 1 (Internal visual). Each sample shall be visually inspected after assembly for conformance
with the applicable die related requirements of MIL-STD-883, method 2012; MIL-STD-449; and the element
specification.
B.3.3.2.3.1.3 Subgroup 2 (electrical testing). Final electrical testing shall include static tests at 25C, at maximum
rated operating temperature, and at minimum rated operating temperature.
B.3.3.2.3.2 Subgroup 3.
B.3.3.2.3.2.1 Sample size. From each wafer lot, a sample of at least 5 dice requiring 10 bond wires minimum shall
be selected.
B.3.3.2.3.2.2 Wire bond strength testing. For wire bond strength testing:
a.
A minimum of ten wires, consisting of chip to package bonds shall be destructively pull tested. An equal
number of bonds shall be tested on each sample die.
b.
For beam lead and flip-chips, five dice shall be tested.
c.
The die metallization shall be acceptable if no failure occurs. If only one wire bond fails, another sample
shall be selected in accordance with B.3.3.2.3.2.1 and subjected to subgroup 3 evaluation. If the second
sample contains no failures, the bonding test results are acceptable. If the second sample contains one or
more failures, or if more than one failure occurs in the first sample, the lot of dice shall be rejected.
d.
The rejected wafer lot may be resubmitted to A3 evaluation if the failure was not due to defective die
metallization.
TABLE B-II. Assembled dice evaluation requirements.
Quantity
Reference
Subgroup
Test
Method
Condition
(accept no.)
paragraph
1
Internal visual
2010
As
10 (0)
2072 1/
applicable
2073 1/
2
Electrical
10 (0)
3
Wire bond
2011
As
10(0) wires
evaluation
applicable
or
20(1) wires
1/ MIL-STD-750 methods.
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